ZTE1.5 thru ZTE5.1
Vishay Semiconductors
formerly General Semiconductor
Voltage Stabilizers
Features
min. 1.083 (27.5)
• Silicon Stabilizer Diodes
• Monolithic integrated analog circuits designed for
small power stabilizer and limitation circuits,
providing low dynamic resistance and high-quality
stabilization performance as well as low noise. In the
reverse direction, these devices show the behavior of
forward-biased silicon diodes.
• The end of the ZTE device marked with the cathode ring
is to be connected: ZTE1.5 and ZTE2 to the negative
pole of the supply voltage; ZTE2.4 thru ZTE5.1 to the
positive pole of the supply voltage.
• These diodes are also available in MiniMELF case with
the type designation LL1.5 … LL 5.1.
max. ∅.079 (2.0)
Cathode
Mark
min. 1.083 (27.5)
max. .150 (3.8)
DO-204AH (DO-35 Glass)
Maximum Ratings
Mechanical Data
Dimensions are in inches
and (millimeters)
Case: DO-35 Glass Case
Weight: approx. 0.13g
Packaging codes/options:
D7/10K per 13” reel (52mm tape), 20K/box
D8/10K per Ammo tape, (52mm tape), 20K/box
max. ∅.020 (0.52)
(TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
IF
100
mA
Power dissipation at Tamb = 25°C
Ptot
300(1)
mW
Junction temperature
TJ
150
°C
Storage temperature range
TS
– 55 to +150
°C
Operating Current (see Table “Characteristics”)
Inverse Current
Electrical and Thermal Characteristics
Parameter
(TA = 25°C unless otherwise noted)
Symbol
Min.
Typ.
Max.
Forward Voltage at IF = 10 mA
VF
–
–
1.1
V
Temperature Coefficient of the
stabilized voltage at IZ = 5 mA
αVZ
αVZ
–
–
–26
–34
–
–
–4
10 /°C
10–4/°C
RθJA
–
–
400(1)
°C/W
ZTE1.5, ZTE2
ZTE2.4, ZTE5.1
Thermal resistance junction to ambient air
Document Number 88425
02-May-02
Unit
www.vishay.com
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