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DF3A68UFU
DF3A6.8UFU TOSHIBA Diodes for Protecting against ESD DF3A6.8UFU ESD Protection Diode Unit: mm * This device is intended for electrostatic discharge (ESD) protection and should not be used for any other purpose, including the constant-voltage diode applications. **This device is not a Zener diode. Abusolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Power dissipation P 100 mW Junction temperature Tj 150 °C Tstg −55 to 150 °C Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ― ― 1-2P1A JEDEC JEITA TOSHIBA Weight: 6.0 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Symbol Reverse stand-off voltage VRWM Test Condition Min Typ. Max Unit ― ― ― 5.0 V Reverse voltage VR IR = 1mA 5.3 6.8 ― V Reverse current IR VRWM = 5 V ― ― 0.5 μA Total capacitance (between Cathode and Anode) CT VR = 0 V, f = 1 MHz ― ― 2.5 pF Forward stand-off voltage VF IF = 1ｍA ― 25 ― V Marking Equivalent Circuit (Top View) 0V 1 2008-05-14
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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