FR6A05 thru FR6GR05
Silicon Fast
Recovery Diode
VRRM = 50 V - 400 V
IF = 6 A
Features
• High Surge Capability
• Types from 50 V to 400 V VRRM
DO-4 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
FR6A(R)05
FR6B(R)05
FR6D(R)05
FR6G(R)05
Unit
VRRM
50
100
200
400
V
VRMS
35
70
140
280
V
VDC
Parameter
50
100
200
400
V
Symbol
Repetitive p
p
peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Conditions
Continuous forward current
IF
TC ≤ 100 °C
16
16
16
16
A
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
TC = 25 °C, tp = 8.3 ms
135
135
135
135
A
Operating temperature
Storage temperature
Tj
Tstg
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Diode forward voltage
Conditions
FR6A(R)05
FR6B(R)05
FR6D(R)05
FR6G(R)05
Unit
VF
Parameter
IF = 6 A, Tj = 25 °C
VR = 50 V, Tj = 25 °C
VR = 50 V, Tj = 150 °C
1.4
25
6
1.4
25
6
1.4
25
6
1.4
25
6
μA
mA
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
500
500
500
500
nS
2.5
2.5
2.5
2.5
°C/W
IR
Reverse current
V
Recovery Time
Maximum reverse recovery
time
TRR
Thermal characteristics
Thermal resistance, junction
- case
Feb 2016
RthJC
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
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