Transistor
2SD0968, 2SD0968A (2SD968, 2SD968A)
Silicon NPN epitaxial planer type
For low-frequency driver amplification
Complementary to 2SB0789 (2SB789) and 2SB0789A (2SB789A)
Unit: mm
Parameter
Collector to
base voltage
2SD0968A
Collector to
2SD0968
100
120
100
ICP
Collector current
120
VEBO
Peak collector current
IC
Junction temperature
V
V
W
150
˚C
–55 ~ +150
Tstg
A
EIAJ:SC–62
MiniP3-F1 Package
A
1
1:Base
2:Collector
3:Emitter
V
1
Tj
Storage temperature
45°
3.0±0.15
0.5
PC
3°
Unit
5
*
Collector power dissipation
˚C
Marking symbol : W(2SD0968)
V(2SD0968A)
ue
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
ce
/D
isc
on
tin
*
Ratings
VCEO
Emitter to base voltage
0.4±0.04
3°
VCBO
emitter voltage 2SD0968A
1.5±0.1
(Ta=25˚C)
Symbol
2SD0968
1
2
0.5±0.08
3
0.4±0.08
0.4 max.
s Absolute Maximum Ratings
4.0+0.25
–0.20
q
High collector to emitter voltage VCEO.
Large collector power dissipation PC.
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine packing.
1.0+0.1
–0.2
q
1.5±0.1
2.6±0.1
q
1.6±0.2
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Features
s Electrical Characteristics
Symbol
Collector to emitter
2SD0968
voltage
an
Parameter
(Ta=25˚C)
en
2SD0968A
VEBO
int
Emitter to base voltage
VCEO
VCE(sat)
Ma
typ
max
100
5
VCE = 10V, IC = 150mA*2
90
50
V
220
100
IC = 500mA, IB = 50mA*2
0.2
0.6
50mA*2
0.85
1.2
Base to emitter saturation voltage
VBE(sat)
IC = 500mA, IB =
Transition frequency
fT
VCB = 10V, IE = –50mA, f = 200MHz
120
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
11
*1h
FE1
Rank
572
V
20
pF
Pulse measurement
R
hFE1
Marking
Symbol
Q
V
MHz
*2
Rank classification
Unit
V
120
VCE = 5V, IC = 500mA*2
hFE2
Collector to emitter saturation voltage
IC = 100µA, IB = 0
min
IE = 10µA, IC = 0
hFE1*1
Forward current transfer ratio
Conditions
90 ~ 155
130 ~ 220
2SD0968
WQ
WR
2SD0968A
VQ
VR
Note.) The Part numbers in the Parenthesis show conventional
part number.
