Medium Power Transistor
(Motor, Relay drive) (90 +20 , 2A)
−10
2SD2170
Dimensions (Unit : mm)
Features
1) Built-in zener diode between collector and base.
2) Zener diode has low dispersion.
3) Strong protection against reverse power surges due to "L" loads.
4) Darlington connection for high DC current gain.
5) Built-in resistor between base and emitter.
6) Built-in damper diode.
4.0
1.0
1.5
0.4
2.5
1.6
0.5
4.5
(1)
(2)
3.0
0.5
(1) Base
(2) Collector
(3) Emitter
0.4
1.5
1.5
0.4
(3)
ROHM : MPT3
EIAJ : SC-62
Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Limits
90 +20
−10
90 +20
−10
6
2
3
0.5 ∗1
2 ∗2
150
−55 to +150
Symbol
VCBO
VCEO
VEBO
Collector current
IC
Collector power dissipation
PC
Junction temperature
Storage temperature
Tj
Tstg
Unit
V
V
V
A (DC)
A (Pulse)
W
°C
°C
∗1 Single pulse Pw=10ms,Duty=1/2
∗2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
Packaging specifications and hFE
Type
Package
hFE
1k to 10k
Marking
Code
Basic ordering unit (pieces)
Equivalent circuit
2SD2170
MPT3
DM
T100
1000
C
B
R1
E : Emitter
B : Base
C : Collector
R2
R1
R2
E
3.5kΩ
300 Ω
Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVCBO
BVCEO
80
80
-
-
110
110
10
V
V
µA
IC = 50µA
IC = 1mA
VCB = 70V
VEB = 5V
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
*1 Measured using pulse current.
ICBO
-
-
3
mA
hFE
1000
-
1.5
10000
V
-
fT
-
80
-
Cob
-
25
-
MHz
pF
IEBO
VCE(sat)
Conditions
IC/IB = 1A/1mA
VCE = 2V , IC = 1A
VCE = 5V , IE = −0.1A , f = 30MHz
VCB = 10V , IE = 0A , f = 1MHz
*1
*1
*2
*2 Transition frequency of the device.
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○ 2009 ROHM Co., Ltd. All rights reserved.
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2009.02 - Rev.B
