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2SC2712-Y
RECTRON 2SC2712 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) FEATURES * Power dissipation PCM : 150 mW(Tamb=25OC) * Collector current ICM : 150 mA * Collector-base voltage V(BR)CBO : 60 V * Operating and storage junction temperature range O O TJ,Tstg: -55 C to +150 C SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * BASE Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 0.055(1.40) 0.047(1.20) 1 2 EMITTER 0.006(0.15) 0.003(0.08) 0.043(1.10) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.004(0.10) 0.000(0.00) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 1 0.019(2.00) 0.071(1.80) O Ratings at 25 C ambient temperature unless otherwise specified. 3 Single phase, half wave, 60 Hz, resistive or inductive load. 0.118(3.00) 0.110(2.80) 2 For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) SYMBOL MIN TYP MAX UNITS Collector-base breakdown voltage (IC= 100mA, IE=0) CHARACTERISTICS V(BR)CBO 60 - - V Collector-emitter breakdown voltage (IC= 1mA, IB=0) V(BR)CEO 50 - - V Emitter-base breakdown voltage (IE= 100mA, IC=0) V(BR)EBO 5 - - V Collector cut-off current (VCB= 60V, IE=0) ICBO - - 0.1 mA Emitter cut-off current (VEB= 5V, IC=0) IEBO - - 0.1 mA DC current gain (VCE= 6V, IC= 2mA) hFE 70 - 700 - VCE(sat) - 0.1 0.25 V MHz Collector-emitter saturation voltage (IC= 100mA, IB= 10mA) fT 80 - - Output capacitance (VCB= 10V, IE= 0, f= 1MHZ) Cob - 2.0 3.5 pF Noise figure (VCE= 6V, IC= 0.1mA, f= 1KHZ, Rg= 10KW) NF - 1.0 10 dB Transition frequency (VCE= 10V, IC= 1mA) CLASSIFICATION OF hFE RANK O Y GR BL Range 70-140 120-240 200-400 350-700 Marking LO LY LG LL 2006-3
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