RECTRON
2SC2712
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
FEATURES
* Power dissipation
PCM :
150
mW(Tamb=25OC)
* Collector current
ICM :
150
mA
* Collector-base voltage
V(BR)CBO :
60
V
* Operating and storage junction temperature range
O
O
TJ,Tstg: -55 C to +150 C
SOT-23
COLLECTOR
3
MECHANICAL DATA
*
*
*
*
*
BASE
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
0.055(1.40)
0.047(1.20)
1
2
EMITTER
0.006(0.15)
0.003(0.08)
0.043(1.10)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.004(0.10)
0.000(0.00)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
1
0.019(2.00)
0.071(1.80)
O
Ratings at 25 C ambient temperature unless otherwise specified.
3
Single phase, half wave, 60 Hz, resistive or inductive load.
0.118(3.00)
0.110(2.80)
2
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
SYMBOL
MIN
TYP
MAX
UNITS
Collector-base breakdown voltage (IC= 100mA, IE=0)
CHARACTERISTICS
V(BR)CBO
60
-
-
V
Collector-emitter breakdown voltage (IC= 1mA, IB=0)
V(BR)CEO
50
-
-
V
Emitter-base breakdown voltage (IE= 100mA, IC=0)
V(BR)EBO
5
-
-
V
Collector cut-off current (VCB= 60V, IE=0)
ICBO
-
-
0.1
mA
Emitter cut-off current (VEB= 5V, IC=0)
IEBO
-
-
0.1
mA
DC current gain (VCE= 6V, IC= 2mA)
hFE
70
-
700
-
VCE(sat)
-
0.1
0.25
V
MHz
Collector-emitter saturation voltage (IC= 100mA, IB= 10mA)
fT
80
-
-
Output capacitance (VCB= 10V, IE= 0, f= 1MHZ)
Cob
-
2.0
3.5
pF
Noise figure (VCE= 6V, IC= 0.1mA, f= 1KHZ, Rg= 10KW)
NF
-
1.0
10
dB
Transition frequency (VCE= 10V, IC= 1mA)
CLASSIFICATION OF hFE
RANK
O
Y
GR
BL
Range
70-140
120-240
200-400
350-700
Marking
LO
LY
LG
LL
2006-3