, One,
J
\S
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SA757
Silicon PNP Power Transistor
DESCRIPTION
• High Power Dissipation: Pc= 60W(Max.)@Tc=25°C
• Collector-Emitter Breakdown Voltage: V(BR)CEO= -90V(Min.)
APPLICATIONS
PIN 1 BASE
• Designed for use in audio amplifier power output stage and
2. EMITTER
3. COLLECT OR (CASE)
general purpose applications.
TO-3 package
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
-— J —1
UNIT
1
VCBO
Collector-Base Voltage
-120
V
f-E
1
1
c
t
-WU-D
VCEO
VEBO
Ic
ICM
PC
Tj
Tstg
Collector-Emitter Voltage
-90
V
Emitter-Base Voltage
-5
V
Collector Current-Continuous
-7
v_
h— u —•>
[*. L*
\C
Collector Power Dissipation
@TC=25'C
Junction Temperature
Storage Temperature
-12
60
150
-55-150
A
W
r
•c
t
' ^^
UK
J
^—&-}•{—•§ c B
r^/ 1 I
t
v1^
A
Collector Current-Peak
/
"I -\L
/
nun
DIM
A
B
c
D
E
15
H
K
L
N
MM
MAX
39.00
25.30
26.6?
7.80
8.50
1.10
1.60
O.SO
1.40
10,92
54$
11.10
1675
g
u
19.40
400
30.00
V
4.30
13.50
1705
1962
420
3020
450
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and puckat-e dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to he hoth accurate and reliable at the time of going
to press. I hmever. NJ Semi-Couduetors assumes no responsibility for any errors or omissions discovered in its use. "
NJ Semi-Conductors encourages customers to verify that datasheets are current before plaoina orders.
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