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2SC5353Q
2SC5353 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5353 Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications • Excellent switching times: tr = 0.7 μs (max), tf = 0.5 μs (max) • Unit: mm High collectors breakdown voltage: VCEO = 800 V Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 900 V Collector-emitter voltage VCEO 800 V Emitter-base voltage VEBO 7 V DC IC 3 Pulse ICP 5 IB 1 Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC 2.0 25 A A JEDEC W ― JEITA SC-67 Tj 150 °C TOSHIBA 2-10R1A Tstg −55 to 150 °C Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10
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