2SC5352
TOSHIBA Transistor
Silicon NPN Triple Diffused Type
2SC5352
Switching Regulator and High-Voltage Switching
Applications
High-Speed DC-DC Converter Applications
•
Excellent switching times: tr = 0.5 μs (max), tf = 0.3 μs (max)
(IC = 4 A)
•
Unit: mm
High breakdown voltage: VCEO = 400 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
600
V
Collector-emitter voltage
VCEO
400
V
Emitter-base voltage
VEBO
7
V
DC
IC
10
Pulse
ICP
15
IB
5
A
PC
80
W
TOSHIBA
Tj
150
°C
Weight: 4.7 g (typ.)
Tstg
−55 to 150
°C
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
A
JEDEC
―
JEITA
―
2-16C1A
Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-10-19