2SC5355
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SC5355
High Voltage Switching Applications
Switching Regulator Applications
Unit: mm
DC-DC Converter Applications
•
Excellent switching times: tr = 0.5 µs (max), tf = 0.3 µs (max)
•
High collector breakdown voltage: VCEO = 400 V
•
High DC current gain: hFE = 20 (min)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
600
V
Collector-emitter voltage
VCEO
400
V
Emitter-base voltage
VEBO
7
V
IC
5
ICP
7
IB
1
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
PC
1.5
25
A
A
JEDEC
W
―
JEITA
―
Tj
150
°C
TOSHIBA
Tstg
−55~150
°C
2-7B5A
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
―
JEITA
―
TOSHIBA
2-7B7A
Weight: 0.36 g (typ.)
1
2006-11-10
