2SD1314
TOSHIBA Transistor
Silicon NPN Triple Diffused Type (Darlington Power Transistor)
2SD1314
High Power Switching Applications
Motor Control Applications
Unit: mm
•
High DC current gain: hFE = 100 (min) (VCE = 5 V, IC = 15 A)
•
Low saturation voltage: VCE (sat) = 2 V (max) (IC = 15 A, IB = 0.4 A)
•
High speed: tf = 3 μs (max) (IC = 15 A)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
600
V
Collector-emitter voltage
VCEO
450
V
Emitter-base voltage
VEBO
6
V
DC
IC
15
Pulse
ICP
30
Base current
IB
1.0
A
JEDEC
―
Collector power dissipation
PC
150
W
JEITA
―
Tj
150
°C
Tstg
−55 to 150
°C
Collector current
Junction temperature
Storage temperature range
A
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
COLLECTOR
BASE
≈ 300 Ω
≈ 100 Ω
EMITTER
1
2006-11-21
