FDD6612A/FDU6612A
30V N-Channel PowerTrench® MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) , fast switching speed and
extremely low RDS(ON) in a small package.
• 30 A, 30 V
RDS(ON) = 20 mΩ @ VGS = 10 V
RDS(ON) = 28 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast Switching
Applications
• High performance trench technology for extremely
low RDS(ON)
• DC/DC converter
• Motor Drives
D
D
G
S
I-PAK
(TO-251AA)
D-PAK
TO-252
(TO-252)
G
G D S
Absolute Maximum Ratings
Symbol
S
TA=25oC unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Continuous Drain Current @TC=25°C
(Note 3)
30
A
@TA=25°C
(Note 1a)
9.5
Pulsed
(Note 1a)
60
PD
Power Dissipation
(Note 1)
(Note 1a)
2.8
@TA=25°C
(Note 1b)
W
36
@TA=25°C
TJ, TSTG
@TC=25°C
1.3
–55 to +175
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
3.9
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
45
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
96
°C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape width
Quantity
FDD6612A
FDD6612A
D-PAK (TO-252)
13’’
12mm
2500 units
FDU6612A
FDU6612A
I-PAK (TO-251)
Tube
N/A
75
©2004 Fairchild Semiconductor Corporation
FDD6612A/FDU6612A Rev E(W)
FDD6612A/FDU6612A
February 2004
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
trr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Qrr
2.3
Diode Reverse Recovery Charge
VGS = 0 V,
IS = 2.3 A
IF = 9.5 A,
diF/dt = 100 A/µs
(Note 2)
0.8
A
1.2
V
20
nS
10
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 45°C/W when mounted on a
1in2 pad of 2 oz copper
b) RθJA = 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
PD
R DS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD6612A/FDU6612A Rev. E(W)
FDD6612A/FDU6612A
Electrical Characteristics
