FDD6632
N-Channel Logic Level UltraFET® Trench Power MOSFET
30V, 9A, 70mΩ
General Description
Features
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
• Fast switching
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
• rDS(ON) = 0.090Ω (Typ), VGS = 4.5V, ID = 6A
Formerly developmental type 83317
• Qgd (Typ) = 0.8nC
Applications
• CISS (Typ) = 255pF
• rDS(ON) = 0.058Ω (Typ), VGS = 10V, ID = 9A
• Qg(TOT) (Typ) = 2.6nC, VGS = 5V
• DC/DC converters
D
D
G
G
S
D-PAK
TO-252
(TO-252)
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
Parameter
Ratings
30
Units
V
VGS
Gate to Source Voltage
±20
V
Continuous (TC = 25oC, VGS = 10V)
9
A
Continuous (TC = 100oC, VGS = 4.5V)
6
A
Continuous (TC = 25oC, VGS = 10V, RθJA = 52oC/W)
4
A
Drain Current
ID
Pulsed
Figure 4
PD
0.1
Operating and Storage Temperature
W
W/oC
-55 to 175
Derate above 25oC
TJ, TSTG
A
15
Power dissipation
oC
Thermal Characteristics
RθJC
10
Thermal Resistance Junction to Case TO-252
o
C/W
o
C/W
RθJA
Thermal Resistance Junction to Ambient TO-252
100
RθJA
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
52
oC/W
Package Marking and Ordering Information
Device Marking
FDD6632
©2004 Fairchild Semiconductor Corporation
Device
FDD6632
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
FDD6632 Rev. B1
FDD6632
October 2004
FDD6632
Typical Characteristics TC = 25°C unless otherwise noted
POWER DISSIPATION MULTIPLIER
1.2
10
1.0
ID, DRAIN CURRENT (A)
8
0.8
0.6
0.4
VGS = 10V
6
4
VGS = 4.5V
2
0.2
0
0
0
25
50
75
100
150
125
175
25
50
75
TC , CASE TEMPERATURE (oC)
100
125
150
175
TC, CASE TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
ZθJC, NORMALIZED
THERMAL IMPEDANCE
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
100
TC = 25oC
IDM, PEAK CURRENT (A)
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - TC
I = I25
150
VGS = 5V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
7
10-5
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
©2004 Fairchild Semiconductor Corporation
FDD6632 Rev. B1
