FDD6670S
30V N-Channel PowerTrench® SyncFET ™
General Description
Features
The FDD6670S is designed to replace a single
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDD6670S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDD6670S as the low-side switch in a synchronous
rectifier is indistinguishable from the performance of the
FDD6670A in parallel with a Schottky diode.
• 64 A, 30 V
RDS(ON) = 9 mΩ @ VGS = 10 V
RDS(ON) = 12.5 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (17nC typical)
• High performance trench technology for extremely
low RDS(ON)
Applications
• High power and current handling capability
• DC/DC converter
.
• Motor Drives
D
D
G
G
S
TO-252
S
Absolute Maximum Ratings
Symbol
T A =25 oC unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
64
A
– Continuous
(Note 3)
– Pulsed
PD
(Note 1a)
Power Dissipation
100
(Note 1)
70
(Note 1a)
3.2
(Note 1b)
TJ, TSTG
W
1.3
–55 to +150
°C
(Note 1)
1.8
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
40
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
96
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD6670S
FDD6670S
13’’
16mm
2500 units
©2001 Fairchild Semiconductor Corporation
FDD6670S Rev E(W)
FDD6670S
September 2001
T A = 25°C unless otherwise noted
Notes:
1. RθJA is the sum of the junction-to-case and case -to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 40°C/W when mounted on a
1in 2 pad of 2 oz copper
b) RθJA = 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
PD
R DS(ON)
where PD is maximum power dissipation at T C = 25°C and RDS(on) is at T J(max) and V GS = 10V. Package current limitation is 21A
FDD6670S Rev E (W)
FDD6670S
Electrical Characteristics
