FDS4488
30V N-Channel PowerTrench® MOSFET
General Description
Features
This N
-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance. These devices are well suited for low
voltage and battery powered applications where low inline power loss and fast switching are required.
• 7.9 A, 30 V.
RDS(ON) = 22 mΩ @ V GS = 10 V
RDS(ON) = 30 mΩ @ V GS = 4.5 V
• Low gate charge (9.5 nC typical)
• High performance trench technology for extremely
low RDS(ON)
Applications
• High power and current handling capability
• DC/DC converter
• Load switch
• Motor drives
DD
D
D
DD
6
SO-8
Pin 1 SO-8
Absolute Maximum Ratings
Symbol
3
2
8
G
S G
S
S
S S
S
4
7
D
D
5
1
TA=25oC unless otherwise noted
Ratings
Units
V DSS
Drain-Source Voltage
Parameter
30
V
V GSS
Gate-Source Voltage
±25
V
ID
Drain Current
7.9
A
– Continuous
(Note 1a)
– Pulsed
PD
40
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.2
(Note 1c)
TJ , TSTG
W
1.0
–55 to +175
°C
(Note 1a)
50
°C/W
(Note 1)
25
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJ C
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS4488
FDS4488
13’’
12mm
2500 units
©2001 Fairchild Semiconductor Corporation
FDS4488 Rev C (W)
FDS4488
April 2013
FDS4488
Typical Characteristics
40
2.6
6.0V
4.5V
R DS(ON) NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
V GS = 10V
4.0V
30
20
3.5V
10
3.0V
0
2.4
V GS=3.5V
2.2
2
1.8
4.0V
1.6
4.5V
1.4
5.0V
6.0V
1.2
10V
1
0.8
0
0.5
1
1.5
2
2.5
3
0
10
V DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
40
0.08
ID = 7.9A
V GS = 10V
1.6
RDS(ON) ON-RESISTANCE (OHM)
,
R DS(ON) NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
30
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
1.4
1.2
1
0.8
0.6
ID = 4A
0.06
T A = 125o C
0.04
0.02
TA = 25 oC
0
-50
-25
0
25
50
75
100
125
150
175
2
4
TJ , JUNCTION TEMPERATURE (oC)
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
25
100
TA = -55o C
25o C
IS, REVERSE DRAIN CURRENT (A)
V DS = 5V
20
ID, DRAIN CURRENT (A)
20
ID, DRAIN CURRENT (A)
125o C
15
10
5
V GS = 0V
10
T A = 125o C
1
25o C
0.1
-55o C
0.01
0.001
0.0001
0
1.5
2
2.5
3
3.5
V GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0
0.2
0.4
0.6
0.8
1
1.2
V SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4488 Rev C (W)
