FDS6894A
Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET
General Description
Features
These N-Channel Logic Level MOSFETs are produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
• 8 A, 20 V.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
• High performance trench technology for extremely
RDS(ON) = 17 mΩ @ VGS = 4.5 V
RDS(ON) = 20 mΩ @ VGS = 2.5 V
RDS(ON) = 30 mΩ @ VGS = 1.8 V
• Low gate charge (17 nC)
low RDS(ON)
• High power and current handling capability
DD1
D1
D
D2
D
5
D2
D
6
4
Q1
3
7
SO-8
Pin 1 SO-8
G2
S2 S
8
S
2
Q2
1
S
Absolute Maximum Ratings
Symbol
G1
S1 G
o
TA=25 C unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
20
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current
8
A
PD
Power Dissipation for Dual Operation
– Continuous
(Note 1a)
– Pulsed
32
2
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
TJ, TSTG
W
0.9
–55 to +150
°C
(Note 1a)
78
°C/W
(Note 1)
40
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6894A
FDS6894A
13’’
12mm
2500 units
©2001 Fairchild Semiconductor Corporation
FDS6894A Rev C (W)
FDS6894A
October 2001
FDS6894A
Typical Characteristics
50
VGS = 4.5V
2
2.5V
40
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
3.0V
2.0V
30
1.8V
20
10
0
0
0.5
1
1.5
2
2.5
3
1.8
VGS = 1.8V
1.6
2.0V
1.4
2.5V
1.2
3.0V
0
10
20
30
40
50
ID, DIRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.045
ID = 8A
VGS = 4.5V
ID = 4A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.5V
0.8
3.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.4
1.2
1
0.8
0.6
0.04
0.035
0.03
o
TA = 125 C
0.025
0.02
TA = 25oC
0.015
0.01
-50
-25
0
25
50
75
100
125
150
1
2
o
3
4
5
VGS , GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
30
10
25oC
25
IS, REVERSE DRAIN CURRENT (A)
TA = -55 oC
VDS = 5V
ID, DRAIN CURRENT (A)
3.5V
1
o
125 C
20
15
10
5
0
VGS = 0V
1
o
TA = 125 C
0.1
o
25 C
0.01
o
-55 C
0.001
0.0001
0.5
0.8
1.1
1.4
1.7
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2
0
0.2
0.4
0.6
0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6894A Rev C (W)
