FDS6898AZ
Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET
General Description
Features
These N-Channel Logic Level MOSFETs are produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
• 9.4 A, 20 V
RDS(ON) = 14 mΩ @ VGS = 4.5 V
RDS(ON) = 18 mΩ @ VGS = 2.5 V
• Low gate charge (16 nC typical)
• ESD protection diode (note 3)
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
DD1
D1
D
D2
D
5
4
D2
D
6
SO-8
Pin 1 SO-8
G2
S2 S
Symbol
3
7
G1
S1 G
S
2
Q2
8
S
Absolute Maximum Ratings
Q1
1
o
TA=25 C unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
20
V
VGSS
Gate-Source Voltage
± 12
V
ID
Drain Current
9.4
A
PD
Power Dissipation for Dual Operation
– Continuous
(Note 1a)
– Pulsed
38
2
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
TJ, TSTG
W
0.9
–55 to +150
°C
(Note 1a)
78
°C/W
(Note 1)
40
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6898AZ
FDS6898AZ
13’’
12mm
2500 units
©2001 Fairchild Semiconductor Corporation
FDS6898AZ Rev C (W)
FDS6898AZ
October 2001
FDS6898AZ
Typical Characteristics
2.2
40
VGS = 4.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
3.0V
ID, DRAIN CURRENT (A)
2.5V
30
2.0V
20
10
2
VGS = 2.0V
1.8
1.6
1.4
2.5V
1.2
3.0V
4.0V
4.5V
1
0.8
0
0
0.5
1
1.5
0
2
10
Figure 1. On-Region Characteristics.
40
0.038
I D = 9.4A
VGS = 4.5V
RDS(ON) , ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
30
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.8
0.6
ID = 4.7A
0.03
0.022
TA = 125oC
0.014
TA = 25o C
0.006
-50
-25
0
25
50
75
100
125
150
1
2
o
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
40
25o C
IS, REVERSE DRAIN CURRENT (A)
TA = -55o C
VDS = 5V
125o C
ID, DRAIN CURRENT (A)
20
I D, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
30
20
10
0
VGS = 0V
10
TA = 125oC
1
25o C
0.1
-55oC
0.01
0.001
0.0001
0.5
1
1.5
2
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6898AZ Rev C (W)
