FDS6894AZ
Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET
General Description
Features
These N-Channel Logic Level MOSFETs are produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
• 8 A, 20 V.
RDS(ON) = 17 mΩ @ VGS = 4.5 V
RDS(ON) = 20 mΩ @ VGS = 2.5 V
RDS(ON) = 30 mΩ @ VGS = 1.8 V
• Low gate charge (14 nC typical)
• High performance trench technology for extremely
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
low RDS(ON)
• High power and current handling capability
DD1
D1
D
D2
D
5
4
D2
D
6
SO-8
G2 S
S2 S
S
Absolute Maximum Ratings
Symbol
3
7
G1
S1 G
Pin 1 SO-8
Q1
2
Q2
8
1
o
TA=25 C unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
20
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current
8
A
PD
Power Dissipation for Dual Operation
– Continuous
(Note 1a)
– Pulsed
32
2
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
1.0
(Note 1c)
TJ, TSTG
W
1.6
0.9
–55 to +150
°C
(Note 1a)
78
°C/W
(Note 1)
40
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6894AZ
FDS6894AZ
13’’
12mm
2500 units
©2001 Fairchild Semiconductor Corporation
FDS6894AZ Rev C (W)
FDS6894AZ
October 2001
FDS6894AZ
Typical Characteristics
1.8
40
2.5V
2.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 4.5V
ID, DRAIN CURRENT (A)
1.8V
30
20
1.5V
10
1.6
VGS = 1.8V
1.4
2.0V
2.5V
1.2
3.0V
3.5V
0.8
0
0
0.5
1
1.5
0
2
10
Figure 1. On-Region Characteristics.
30
40
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.045
ID = 8A
VGS = 4.5V
R DS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
20
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
1.4
1.2
1
0.8
ID = 4A
0.035
0.025
TA = 125 oC
o
TA = 25 C
0.015
0.005
0.6
-50
-25
0
25
50
75
100
125
1
150
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
o
TJ , JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
40
TA = -55oC
VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
o
25 C
I D, DRAIN CURRENT (A)
4.5V
1
30
o
125 C
20
10
0
10
TA = 125o C
1
o
25 C
0.1
-55o C
0.01
0.001
0.0001
0.6
0.9
1.2
1.5
1.8
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.1
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6894AZ Rev C (W)
