MITSUBISHI SEMICONDUCTOR
M54587P/FP
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54587P and M54587FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are
made of PNP and NPN transistors. Both the semiconductor
integrated circuits perform high-current driving with extremely low input-current supply.
PIN CONFIGURATION
NC
1
20
COM COMMON
IN1
2
19
O1
IN2
3
18
O2
IN3
4
17
O3
IN4
5
16
O4
IN5
6
15
O5
IN6
7
14
O6
IN7
8
13
O7
IN8
9
12
O8
GND
10
11
VCC
INPUT
FEATURES
q High breakdown voltage (BVCEO ≥ 50V)
q High-current driving (IC(max) = 500mA)
q “L” active level input
q With input diode
q With clamping diodes
q Wide operating temperature range (Ta = –20 to +75°C)
APPLICATION
Interfaces between microcomputers and high-voltage, highcurrent drive systems, drives of relays and MOS-bipolar logic
IC interfaces
OUTPUT
NC : No connection
20P4(P)
Package type 20P2N-A(FP)
CIRCUIT DIAGRAM (EACH CIRCUIT)
VCC
7K
COM
INPUT
OUTPUT
7K
FUNCTION
The M54587 is produced by adding PNP transistors to
M54585 inputs. Eight circuits having active L-level inputs are
provided.
Resistance of 7kΩ and diode are provided in series between
each input and PNP transistor base. The input diode is intended to prevent the flow of current from the input to the
VCC. Without this diode, the current flow from “H” input to the
VCC and the “L” input circuits is activated, in such case where
one of the inputs of the 8 circuits is “H” and the others are “L”
to save power consumption. The diode is inserted to prevent
such misoperation.
This device is most suitable for a driver using NMOS IC output especially for the driver of current sink.
Collector current is 500mA maximum. Collector-emitter supply voltage is 50V.
The M54587FP is enclosed in a molded small flat package,
enabling space saving design.
2.7K
7.2K
3K
GND
The eight circuits share the Vcc, COM and GND
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit : Ω
Mar.2002
