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M54585FP

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POWEREX MITSUBISHI SEMICONDUCTOR M54585P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54585P and M54585FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. FEATURES High breakdown voltage (BV CEO ≥ 50V) High-current driving (Ic(max) = 500mA) With clamping diodes Driving available with TTL output or with PMOS IC output Wide operating temperature range (Ta = –20 to +75°C) PIN CONFIGURATION         INPUT          IN1→ 1 18 →O1  IN2→ 2 17 →O2   IN3→ 3 16 →O3  IN4→ 4 15 →O4  IN5→ 5 14 →O5  IN6→ 6 13 →O6  IN7→ 7 12 →O7  IN8→ 8 11 →O8  GND 10 →COM COMMON FUNCTION The M54585P and M54585FP each have eight circuits, which are NPN Darlington transistors. Input transistors have resistance of 2.7kΩ between the base and input pin. A spikekiller clamping diode is provided between each output pin and GND. Output transistor emitters are all connected to the GND pin. Collector current is 500mA maximum. The maximum collector-emitter voltage is 50V. The M54585FP is enclosed in a molded small flat package, enabling space-saving design.    OUTPUT     9 Package type 18P4G(P) NC APPLICATION Drives of relays and printers, digit drives of indication elements such as LEDs and lamps, and MOS-bipolar logic IC interfaces          INPUT          1 20 NC IN1→ 2 19 →O1  IN2→ 3 18 →O2  IN3→ 4 17 →O3  IN4→ 5 16 →O4  IN5→ 6 15 →O5  IN6→ 7 14 →O6  IN7→ 8 13 →O7  IN8→ 9 12 →O8  GND 11 →COM COMMON      OUTPUT     10 Package type 20P2N-A(FP) NC : No connection CIRCUIT DIAGRAM COM OUTPUT INPUT 2.7K 7.2K 3K GND The eight circuits share the COM and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω Aug. 1999

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