2SK4073LS
Ordering number : ENA0500
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK4073LS
General-Purpose Switching Device
Applications
Features
•
•
•
Ultralow ON-resistance.
Load switching applications.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
60
Gate-to-Source Voltage
VGSS
±20
V
ID
90
A
Drain Current (DC)
Drain Current (Pulse)
IDP
PW≤10µs, duty cycle≤1%
V
360
A
2.0
W
Allowable Power Dissipation
PD
40
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
850
mJ
Avalanche Current *2
IAV
70
A
Tc=25°C
Note : *1 VDD=30V, L=200µH, IAV=70A
*2 L≤200µH, Single pulse
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : K4073
Symbol
V(BR)DSS
Conditions
Ratings
min
typ
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
60
VGS(off)
yfs
VDS=10V, ID=1mA
VDS=10V, ID=45A
1.2
RDS(on)1
RDS(on)2
ID=45A, VGS=10V
ID=45A, VGS=4V
Unit
max
IDSS
IGSS
V
±10
µA
µA
2.6
V
3.8
5.0
mΩ
5.0
7.0
mΩ
1
44
74
S
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Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
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SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
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