HOME>在庫検索>在庫情報
2SA1095
Inchange Semiconductor Product Specification 2SA1095 Silicon PNP Power Transistors · DESCRIPTION ·With MT-200 package ·Complement to type 2SC2565 ·High breakdown voltage ·High transition frequency APPLICATIONS ·Power amplifier applications ·Recommended for 100W high-fidelity audio frequency amplifer output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160 V VCEO Collector-emitter voltage Open base -160 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A IE Emitter current 15 A PC Collectorl power dissipation 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃
TOSHIBA
株式会社 東芝セミコンダクター&ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
宅配業者の代金引換又は商品到着後一週間以内の銀行振込となります。