DATA SHEET
SILICON POWER TRANSISTOR
2SA1008
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1008 is a mold power transistor developed for high-speed
switching, and is ideal for use as a driver in devices such as switching
regulators, DC/DC converters, and high-frequency power amplifiers.
ORDERING INFORMATION
Part No.
2SA1008
FEATURES
Package
TO-220AB
(TO-220AB)
• Low collector saturation voltage
• Fast switching speed
• Complementary transistor: 2SC2331
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
°
Ratings
Unit
Collector to base voltage
Parameter
Symbol
VCBO
−100
V
Collector to emitter voltage
VCEO
−100
V
Emitter to base voltage
VEBO
−7.0
V
−2.0
A
−4.0
A
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(pulse)
Conditions
Base current (DC)
PW ≤ 300 µs,
duty cycle ≤ 10%
−1.0
IB(DC)
Total power dissipation
PT
Junction temperature
Tj
Storage temperature
Tstg
TC = 25°C
TA = 25°C
A
15
W
1.5
W
150
−55 to +150
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14866EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002