Ordering number:ENN928C
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
2SB886/2SD1196
Driver Applications
Applications
Package Dimensions
· Motor drivers, printer hammer drivers, relay drivers,
voltage regulator control.
unit:mm
2010C
[2SB886/2SD1196]
Features
10.2
3.6
4.5
5.1
1.3
18.0
15.1
6.3
2.7
· High DC current gain.
· High current capacity and wide ASO.
· Low saturation voltage.
14.0
5.6
1.2
0.8
1
2
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220AB
3
2.7
( ) : 2SB886
0.4
2.55
Specifications
2.55
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(–)110
V
Collector-to-Emitter Voltage
VCEO
VEBO
(–)100
V
(–)6
V
IC
(–)8
A
ICP
(–)12
A
1.75
W
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Tc=25˚C
40
W
150
˚C
–55 to +150
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(–)80V, IE=0
(–)0.1
mA
Emitter Cutoff Current
IEBO
VEB=(–)5V, IC=0
(–)3.0
mA
DC Current Gain
hFE
fT
VCE=(–)3V, IC=(–)4A
VCE=(–)5V, IC=(–)4A
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(–)4A, IB=(–)8mA
Base-to-Emitter Saturation Voltage
VBE(sat)
1500
4000
20
0.9
IC=(–)4A, IB=(–)8mA
MHz
(–)1.5
(–1.0)
V
V
(–)2.0
V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1002AS (KT)/91098HA (KT)/10996TS (KOTO) 8-4331/D251MH/4067KI/2045MW, TS No.928–1/4