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2SD1409A
2SD1409A TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD1409A Industrial Applications High Voltage Switching Applications Unit: mm • High DC current gain: hFE = 600 (min.) (VCE = 2 V, IC = 2 A) • Monolithic construction with built-in base-emitter shunt resistor Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 5 V Collector current IC 6 A Base current IB 1 A Ta = 25°C Collector power dissipation Tc = 25°C PC 2.0 25 W Tj Storage temperature range 150 °C JEDEC Tstg Junction temperature −55 to 150 °C JEITA ― SC-67 TOSHIBA 2-10R1A Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 1.7 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Base ≈ 2.5 kΩ ≈ 200 Ω Emitter 1 2009-12-21
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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