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2SA1705S
2SA1705S Transistors Si PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)900m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)500m @I(C) (A) (Test Condition)500m @I(B) (A) (Test Condition)50m h(FE) Min. Current gain.140 h(FE) Max. Current gain.280 @I(C) (A) (Test Condition)100m @V(CE) (V) (Test Condition)2.0 f(T) Min. (Hz) Transition Freq150MÂ @I(C) (A) (Test Condition)50m @V(CE) (V) (Test Condition)10 C(obo) (Max) (F)12p @V(CB) (V) (Test Condition)10 @Freq. (Hz) (Test Condition)1.0M
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