FDW2503NZ
Dual N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
Features
This N
-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
• 5.5 A, 20 V.
Applications
• ESD protection diode (note 3)
• Load switch
• High performance trench technology for extremely
low RDS(ON)
RDS(ON) = 20 mΩ @ V GS = 4.5V
RDS(ON) = 26 mΩ @ V GS = 2.5V
• Extended V GSS range (±12V) for battery applications
• Motor drive
• DC/DC conversion
• Low profile TSSOP-8 package
• Power management
1
2
Ratings
Drain Current
– Continuous
(Note 1a)
– Pulsed
PD
V
±12
Gate-Source Voltage
Units
20
Drain-Source Voltage
V GSS
ID
5
TA=25oC unless otherwise noted
Parameter
V DSS
6
4
Symbol
7
3
Absolute Maximum Ratings
8
V
5.5
A
30
Power Dissipation
(Note 1a)
1.0
(Note 1b)
0.6
W
–55 to +150
°C
(Note 1a)
100
°C/W
(Note 1b)
TJ , TSTG
125
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
2503NZ
Device
FDW2503NZ
©2008 Fairchild Semiconductor Corporation
Reel Size
Tape width
Quantity
13’’
12mm
2500 units
FDW2503NZ Rev C1(W)
FDW2503NZ
July 2008
FDW2503NZ
Typical Characteristics
60
V GS = 4.5V
1.8
3.5V
RDS(ON) NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
3.0V
ID, DRAIN CURRENT (A)
50
40
2.5V
30
20
2.0V
10
0
0
1
2
3
1.6
V GS = 2.5V
1.4
3.0V
1.2
3.5V
0
10
20
30
40
50
60
ID , DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.05
ID = 5.5A
V GS = 4.5V
RDS(ON) ON-RESISTANCE (OHM)
,
RDS(ON) NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
4.5V
0.8
4
V DS, DRAIN TO SOURCE VOLTAGE (V)
1.4
1.2
1
0.8
0.6
ID = 2.8A
0.04
0.03
TA = 125o C
0.02
TA = 25o C
0.01
-50
-25
0
25
50
75
100
125
150
175
1
2
3
4
5
V GS, GATE TO SOURCE VOLTAGE (V)
TJ , JUNCTION TEMPERATURE ( oC)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
40
25o C
TA = -55o C
IS , REVERSE DRAIN CURRENT (A)
VDS = 5V
ID, DRAIN CURRENT (A)
4.0V
1
30
125o C
20
10
V GS = 0V
10
T A = 125o C
1
0.1
25oC
0.01
-55o C
0.001
0.0001
0
1
1.5
2
2.5
V GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
0
0.2
0.4
0.6
0.8
1
1.2
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW2503NZ Rev C1(W)
