FDW2507NZ
Common Drain N-Channel 2.5V specified PowerTrench MOSFET
General Description
Features
This monolithic common drain N-Channel MOSFET has
been designed using Fairchild Semiconductor’s
advanced PowerTrench process to optimize the RDS(ON)
@ VGS = 2.5v on special TSSOP-8 lead frame with all
the drains on one side of the package.
• 7.5 A, 20 V
• Isolated source and drain pins
Applications
• ESD protection diode (note 3)
• Li-Ion Battery Pack
• High performance trench technology for extremely
low RDS(ON) @ VGS = 2.5 V
RDS(ON) = 19 mΩ @ VGS = 4.5 V
RDS(ON) = 23 mΩ @ VGS = 2.5 V
• Low profile TSSOP-8 package
D
D
D
D
1
2
TSSOP-8
Absolute Maximum Ratings
Symbol
6
4
Pin 1
7
3
G2
S2
G1
S1
8
5
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current
(Note 1a)
7.5
A
PD
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1.1
– Continuous
– Pulsed
TJ, TSTG
30
Operating and Storage Junction Temperature Range
–55 to +150
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
77
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
114
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2507NZ
FDW2507NZ
13’’
12mm
3000 units
2003 Fairchild Semiconductor Corporation
FDW2507NZ Rev C2
FDW2507NZ
March 2003
FDW2507NZ
Typical Characteristics
1.8
20
2.5V
3.5V
ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 4.5V
15
2.0V
10
1.5V
5
1.6
VGS = 2.0V
1.4
1.2
2.5V
3.0V
4.5V
0.8
0
0
0.5
1
1.5
0
2
5
Figure 1. On-Region Characteristics.
15
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.04
ID = 7.5A
VGS = 4.5V
RDS(ON), ON-RESISTANCE (OHM)
ID = 3.8A
1.4
1.2
1
0.8
0.6
-50
10
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
3.5V
1
-25
0
25
50
75
100
125
0.035
0.03
TA = 125oC
0.025
0.02
TA = 25oC
0.015
0.01
150
1
2
3
4
5
o
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VDS = 5V
TA = -55oC
IS, REVERSE DRAIN CURRENT (A)
30
o
25 C
ID, DRAIN CURRENT (A)
25
125oC
20
15
10
5
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
0.5
1
1.5
2
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW2507NZ Rev C2
