FDW2508P
Dual P-Channel 1.8 V Specified PowerTrench MOSFET
General Description
Features
This P-Channel –1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
•
–6 A, –12 V. RDS(ON) = 18 mΩ @ VGS = –4.5 V
RDS(ON) = 22 mΩ @ VGS = –2.5 V
RDS(ON) = 30 mΩ @ VGS = –1.8 V
Applications
•
Low gate charge(26nC typical)
•
Power management
•
•
Load switch
High performance trench technology for extremely
low RDS(ON)
•
Battery protection
•
Low profile TSSOP-8 package
G2
S2
S2
D2
1
2
TSSOP-8
7
3
6
4
G1
S1
S1
D1
8
5
Pin 1
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Parameter
VDSS
VGSS
Gate-Source Voltage
ID
Drain Current
Ratings
Drain-Source Voltage
(Note 1)
V
±8
– Continuous
– Pulsed
PD
Units
–12
V
–6
A
–30
Power Dissipation for Single Operation
1.3
W
(Note 1b)
1
–55 to +150
°C
(Note 1a)
100
°C/W
(Note 1b)
TJ, TSTG
(Note 1a)
125
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2508P
FDW2508P
13’’
12mm
2500 units
2001 Fairchild Semiconductor Corporation
FDW2508P Rev. E (W)
FDW2508P
December 2001
FDW2508P
Typical Characteristics
2
VGS = -4.5V
-2.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
60
-ID, DRAIN CURRENT (A)
-3.0V
45
-2.0V
-1.8V
30
-1.5V
15
0
1.8
VGS = -1.8V
1.6
-2.0V
1.4
-2.5V
1.2
-3.0V
1
2
3
4
0
15
-VDS, DRAIN TO SOURCE VOLTAGE (V)
30
45
60
-ID, DIRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.4
0.045
ID = -6A
VGS = -4.5V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-4.5V
0.8
0
1.2
1
0.8
ID = -3A
0.035
TA = 125oC
0.025
TA = 25oC
0.015
0.005
0.6
-50
-25
0
25
50
75
100
125
1
150
2
Figure 3. On-Resistance Variation with
Temperature.
4
5
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
40
100
TA = -55oC
25oC
-IS, REVERSE DRAIN CURRENT (A)
VDS = -5V
3
-VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (oC)
o
-ID, DRAIN CURRENT (A)
-3.5V
1
125 C
30
20
10
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
0.6
1
1.4
1.8
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.2
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW2508P Rev. E (W)
