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U20DL2C53A
U20DL2C53A TOSHIBA High Efficiency Diode Stack (HED) Silicon Epitaxial Type U20DL2C53A Switching Mode Power Supply Application Converter and Chopper Application • Repetitive peak reverse voltage: VRRM = 200 V • Unit: mm Average output recified current: IO = 20 A • Ultra fast reverse-recovery time: trr = 35 ns (max) • Low switching losses and output noise. • Power surface-mount device for thin flat package: “TFP” (Toshiba package name) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 200 V Average output recified current IO 20 A Peak one cycle surge forward current (non-repetitive, sine wave) Junction temperature Storage temperature range IFSM 100 (50 Hz) 110 (60 Hz) A JEDEC Tj −40 to 150 °C Tstg −40 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ― JEITA ― TOSHIBA 12-9B1A Weight: 0.74 g (typ.) Polarity ③K *①A1 ②A2 *: Common Terminal 1 2006-11-08
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