U20DL2C53A
TOSHIBA High Efficiency Diode Stack (HED)
Silicon Epitaxial Type
U20DL2C53A
Switching Mode Power Supply Application
Converter and Chopper Application
•
Repetitive peak reverse voltage: VRRM = 200 V
•
Unit: mm
Average output recified current: IO = 20 A
•
Ultra fast reverse-recovery time: trr = 35 ns (max)
•
Low switching losses and output noise.
•
Power surface-mount device for thin flat package:
“TFP” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
200
V
Average output recified current
IO
20
A
Peak one cycle surge forward current
(non-repetitive, sine wave)
Junction temperature
Storage temperature range
IFSM
100 (50 Hz)
110 (60 Hz)
A
JEDEC
Tj
−40 to 150
°C
Tstg
−40 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
―
JEITA
―
TOSHIBA
12-9B1A
Weight: 0.74 g (typ.)
Polarity
③K
*①A1
②A2
*: Common Terminal
1
2006-11-08