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2SK3075
2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF Power MOSFET for VHF− and UHF−Band Power Amplifier Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment. Output Power : PO ≥ 7.5W Power Gain : GP ≥ 11.7dB Drain Efficiency : ηD ≥ 50% Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS 25 V ID 5 A Drain Power Dissipation PD* 20 W Channel Temperature Tch 150 °C Storage Temperature Range Tstg −45 to 150 °C Drain Current JEDEC — JEITA — TOSHIBA 2−5N1A Weight: 0.08 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Tc = 25°C When mounted on a 1.6mm glass epoxy PCB Marking Start of commercial production 1998-06 1 2014-03-01
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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