TC7SZ00F
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SZ00F
2-Input NAND Gate
Features
•
High output current
: ±24 mA (min) at VCC = 3 V
•
Super high speed operation : tpd = 2.4 ns (typ.)
at VCC = 5 V, 50 pF
•
Operating voltage range
•
5.5-V tolerant inputs
: VCC = 1.8 to 5.5 V
•
5.5-V power down protection output
•
Matches the performance of TC74LCX series when operated at
3.3-V VCC
(SMV)
Weight: 0.016 g (typ.)
Marking
Product Name
J
1
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage
VCC
−0.5 to 6
V
DC input voltage
VIN
−0.5 to 6
V
DC output voltage
VOUT
Input diode current
IIK
−20
Output diode current
IOK
−20
DC output current
IOUT
±50
mA
DC VCC/ground current
ICC
±50
mA
Power dissipation
PD
200
mW
Storage temperature
Tstg
−65 to 150
°C
TL
260
°C
Lead temperature (10 s)
−0.5 to 6
(Note 1)
Pin Assignment (top view)
V
IN B
−0.5 to VCC +0.5 (Note 2)
1
IN A
2
GND
3
5 VCC
mA
(Note 3)
mA
4
OUT Y
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: VCC = 0 V
Note 2: High or Low State. Do not exceed IOUT of absolute maximum ratings.
Note 3: VOUT < GND
Start of commercial production
1998-08
1
2015-07-17
