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TC7WH74FUTE12L,F
TC7WH74FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WH74FU,TC7WH74FK D-Type flip flop with preset and clear Features • High speed: fMAX = 170 MHz (typ.) at VCC = 5V • Low power dissipation: ICC = 2μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • 5.5-V tolerant inputs • Balanced propagation delays: tpLH ∼ tpHL − • Wide operating voltage range: VCC = 2 to 5.5V TC7WH74FU （SM8） TC7WH74FK Marking SM8 US8 Product Name H74 Lot No. WH 74 （US8） Weight SSOP8-P-0.65: 0.02 g (typ.) SSOP8-P-0.50A: 0.01 g (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage VCC −0.5 to 7.0 V DC input voltage VIN −0.5 to 7.0 V DC output voltage VOUT −0.5 to VCC + 0.5 V Input diode current IIK −20 mA Output diode current IOK ±20 ( Note 1) mA DC output current IOUT ±25 mA DC VCC/ground current ICC ±50 mA Power dissipation PD Storage temperature Tstg Pin Assignment (top view) Lead temperature (10 s) TL 200 (US8) −65 to 150 260 PR CLR Q 8 7 6 5 °C CK D Q GND °C 300 (SM8) VCC 1 2 3 4 mW Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: VOUT < GND、VOUT > VCC 1 2009-09-28
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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