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MRF6V12500HS

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Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 4, 3/2015 RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These RF power transistors are designed for applications operating at frequencies between 960 and 1215 MHz such as distance measuring equipment (DME), transponders and secondary radars for air traffic control. These devices are suitable for use in pulse applications, including Mode S ELM.  Typical Pulse Performance: VDD = 50 Volts, IDQ = 200 mA Pout (1) (W) Freq. (MHz) Gps (dB) D (%) Pulse (128 sec, 10% Duty Cycle) 500 Peak 1030 19.7 Pulse (48  (32 sec on, 18 sec off), Period 2.4 msec, 6.4% Long--term Duty Cycle) 500 Peak 1030 19.7 62.0 Broadband Pulse (128 sec, 10% Duty Cycle) 500 Peak 960--1215 18.5 960-1215 MHz, 500 W, 50 V PULSE RF POWER LDMOS TRANSISTORS 62.0 Narrowband Mode S ELM MRF6V12500H MRF6V12500HS 57.0 Application Signal Type Narrowband Short Pulse 1. Minimum output power for each specified pulse condition. NI-780H-2L MRF6V12500H  Capable of Handling 10:1 VSWR @ 50 Vdc, 1030 MHz, 500 Watts Peak Power Features  Characterized with Series Equivalent Large--Signal Impedance Parameters     Internally Matched for Ease of Use Qualified up to a Maximum of 50 VDD Operation Integrated ESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C Operation NI-780S-2L MRF6V12500HS 1 Drain Gate 2 (Top View) Figure 1. Pin Connections  Freescale Semiconductor, Inc., 2009--2010, 2012, 2015. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MRF6V12500H MRF6V12500HS 1

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