Freescale Semiconductor
Technical Data
Document Number: MRF6V12500H
Rev. 4, 3/2015
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These RF power transistors are designed for applications operating at
frequencies between 960 and 1215 MHz such as distance measuring
equipment (DME), transponders and secondary radars for air traffic control.
These devices are suitable for use in pulse applications, including Mode S
ELM.
Typical Pulse Performance: VDD = 50 Volts, IDQ = 200 mA
Pout (1)
(W)
Freq.
(MHz)
Gps
(dB)
D
(%)
Pulse
(128 sec, 10% Duty Cycle)
500 Peak
1030
19.7
Pulse
(48 (32 sec on, 18 sec off),
Period 2.4 msec,
6.4% Long--term Duty Cycle)
500 Peak
1030
19.7
62.0
Broadband
Pulse
(128 sec, 10% Duty Cycle)
500 Peak
960--1215
18.5
960-1215 MHz, 500 W, 50 V
PULSE
RF POWER LDMOS TRANSISTORS
62.0
Narrowband
Mode S ELM
MRF6V12500H
MRF6V12500HS
57.0
Application
Signal Type
Narrowband
Short Pulse
1. Minimum output power for each specified pulse condition.
NI-780H-2L
MRF6V12500H
Capable of Handling 10:1 VSWR @ 50 Vdc, 1030 MHz, 500 Watts Peak
Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
NI-780S-2L
MRF6V12500HS
1 Drain
Gate 2
(Top View)
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2009--2010, 2012, 2015. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF6V12500H MRF6V12500HS
1
