Freescale Semiconductor
Technical Data
Document Number: MRF6VP121KH
Rev. 3, 4/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF Power transistors designed for applications operating at frequencies
between 965 and 1215 MHz. These devices are suitable for use in pulsed
applications.
• Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout =
1000 Watts Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 μsec,
Duty Cycle = 10%
Power Gain — 20 dB
Drain Efficiency — 56%
• Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 Watts Peak
Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Designed for Push--Pull Operation
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6VP121KHR6
MRF6VP121KHSR6
965-1215 MHz, 1000 W, 50 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 375D-05, STYLE 1
NI-1230
MRF6VP121KHR6
CASE 375E-04, STYLE 1
NI-1230S
MRF6VP121KHSR6
PARTS ARE PUSH-PULL
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
--0.5, +110
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
TC
150
°C
TJ
225
°C
Case Operating Temperature
Operating Junction Temperature
(1,2)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
© Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6VP121KHR6 MRF6VP121KHSR6
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