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2SC3419
2SC3419 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3419 Medium-Power Amplifier Applications. Unit: mm • Low saturation voltage: VCE (sat) = 0.25 V (typ.) • High collector power dissipation: PC = 1.2 W (Ta = 25°C) • Complementary to 2SA1356 (IC = 500 mA, IB = 50 mA) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 5 V Collector current IC 800 mA Base current IB 80 mA Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC 1.2 5 W JEDEC Tj 150 °C Tstg −55 to 150 °C ― JEITA ― TOSHIBA 2-8H1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.82 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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