2SC3419
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
2SC3419
Medium-Power Amplifier Applications.
Unit: mm
•
Low saturation voltage: VCE (sat) = 0.25 V (typ.)
•
High collector power dissipation: PC = 1.2 W (Ta = 25°C)
•
Complementary to 2SA1356
(IC = 500 mA, IB = 50 mA)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
800
mA
Base current
IB
80
mA
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
PC
1.2
5
W
JEDEC
Tj
150
°C
Tstg
−55 to 150
°C
―
JEITA
―
TOSHIBA
2-8H1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.82 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09
