HOME＞在庫検索＞在庫情報
ZVN1214M
Part Number: Integra IB1214M6 (Preliminary) TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB1214M6 is designed for L-Band radar systems operating over the instantaneous bandwidth of 1.200 - 1.400 GHz. While operating in class C mode this common base device supplies a minimum of 6 watts of peak pulse power under the conditions of 100µs pulse width and 10% duty cycle, and Pin=0.8W. All devices are 100% screened for large signal RF parameters. Common Base Configuration − Single Power Supply Gold Metal − Maximum Reliability Emitter Ballasting − Optimum Thermal Distribution PRELIMINARY DATA General Information IB1214M6 Date: Assbly Lot - SN : Wafer : Test Fixture : Pass / Fail : OPERATOR: Vcc=28V PRELIMINARY DATA Test Sequence Name 4/2/2009 D2560-1 NA NA Device Passes FB Pulse: 100us-10% Freq (MHz) PIN (W) RL (dB) POUT (W) GP (dB) Nominal 1200 0.8 -13.0 6.8 9.29 Nominal 1300 0.8 -15.0 6.6 9.14 Nominal 1400 0.8 -18.0 6.3 8.99 IB1214M6 PRELIMINARY SPECIFICATION FILE: IB1214M6-REV-PR1-DS-REV-B Page 1 of 6 Internal Impedance Matching − Ease of Use − Ultra-low Loss Design PRELIMINARY DATA dG (dB) nc (%) Droop (dB) VSWR-S 1.5:1 (P-F) VSWR-LMT 2:1 (P-F) 0.460 52.8 0.13 P P 0.470 49.8 0.13 P P 0.480 0.30 IC (A) 47.2 0.14 P P www.integratech.com PHONE: 310-606-0855 FAX: 310-606-0865 Be0 Package − Unmatched Thermal Reliability RF Test Fixture − Broadband − Matched to 50Ω − Long-term Correlation − 100% Device RF Screening − No External Tuning Allowed INTEGRA TECHNOLOGIES, INC. 321 CORAL CIRCLE EL SEGUNDO, CA 90245-4620
お買い上げ小計が１万円以上の場合は送料はサービスさせて頂きます。１万円未満の場合、また時間指定便はお客様負担となります。（送料は地域により異なります。）
