Part Number:
Integra
IB1214M6 (Preliminary)
TECHNOLOGIES, INC.
Silicon Bipolar
− Ultra-high fT
L-Band Radar Transistor
Class C Operation
− High Efficiency
The high power pulsed radar transistor device part number
IB1214M6 is designed for L-Band radar systems operating over
the instantaneous bandwidth of 1.200 - 1.400 GHz. While
operating in class C mode this common base device supplies a
minimum of 6 watts of peak pulse power under the conditions of
100µs pulse width and 10% duty cycle, and Pin=0.8W. All
devices are 100% screened for large signal RF parameters.
Common Base Configuration
− Single Power Supply
Gold Metal
− Maximum Reliability
Emitter Ballasting
− Optimum Thermal Distribution
PRELIMINARY DATA
General Information
IB1214M6
Date:
Assbly Lot - SN :
Wafer :
Test Fixture :
Pass / Fail :
OPERATOR:
Vcc=28V
PRELIMINARY DATA
Test Sequence
Name
4/2/2009
D2560-1
NA
NA
Device Passes
FB
Pulse: 100us-10%
Freq
(MHz)
PIN
(W)
RL
(dB)
POUT
(W)
GP
(dB)
Nominal
1200
0.8
-13.0
6.8
9.29
Nominal
1300
0.8
-15.0
6.6
9.14
Nominal
1400
0.8
-18.0
6.3
8.99
IB1214M6 PRELIMINARY SPECIFICATION
FILE: IB1214M6-REV-PR1-DS-REV-B
Page 1 of 6
Internal Impedance Matching
− Ease of Use
− Ultra-low Loss Design
PRELIMINARY DATA
dG
(dB)
nc
(%)
Droop
(dB)
VSWR-S
1.5:1
(P-F)
VSWR-LMT
2:1
(P-F)
0.460
52.8
0.13
P
P
0.470
49.8
0.13
P
P
0.480
0.30
IC
(A)
47.2
0.14
P
P
www.integratech.com
PHONE: 310-606-0855
FAX: 310-606-0865
Be0 Package
− Unmatched Thermal Reliability
RF Test Fixture
− Broadband
− Matched to 50Ω
− Long-term Correlation
− 100% Device RF Screening
− No External Tuning Allowed
INTEGRA TECHNOLOGIES, INC.
321 CORAL CIRCLE
EL SEGUNDO, CA 90245-4620