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2N5296
Inchange Semiconductor Product Specification 2N5294 2N5296 2N5298 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High power dissipation APPLICATIONS ・Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 导体 电半 TOR UC Absolute maximum ratings(Ta=25℃) 固 SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS OND MIC E Collector-base voltage 2N5294 2N5296 Open emitter NG S CHA IN Collector-emitter voltage Emitter-base voltage 2N5298 2N5294 2N5296 Open base 2N5298 VALUE UNIT 80 60 V 80 70 40 V 60 Open collector 7 V IC Collector current 4 A IB Base current 2 A PT Total power dissipation 36 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 3.47 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case
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