NPN Power Silicon Transistor
2N5240
Features
•
High Voltage: Vceo(sus) = 300 V (min)
•
Wide Area of Safe Operation
•
Designed for use in series regulators, power
amplifiers, inverters, deflection circuits, switching
regulators, and high-voltage bridge amplifiers.
•
TO-3 (TO-204AA) Package
Maximum Ratings (TA = 25 °C)
Ratings
Symbol
Value
Units
VCBO
375
Vdc
VCER(sus)
350
Vdc
VCE0(sus)
VEBO
300
Vdc
6.0
Vdc
Collector Current - Continuous
IC
5
Adc
Base Current
IB
2
Adc
Collector Power Dissipation
PC
100
W
Junction Temperature
TJ
+200
°C
Tstg
-65 to +200
°C
Collector - Base Voltage
Collector - Emitter Voltage (RBE < 50 Ω)
Collector - Emitter Voltage
Emitter - Base Voltage
Storage Temperature Range
Electrical Characteristics
TC = 25°C unless otherwise specified
Symbol
Parameter
VCEO(SUS) Collector-Emitter Sustaining Voltage
VCEO(SUS) Collector-Emitter Sustaining Voltage
Conditions
lC = 0.2 A;
lC = 0.2 A;
IB = 0
RBE < 50 Ω
V(BR)EBO
Emitter-Base Breakdown Voltage
VCE(sat)-1
Collector-Emitter Saturation Voltage
VCE(sat)-2
Collector-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
lCEV
Collector Cutoff Current
ICEO
Collector Cutoff Current
lESO
IS/B
Emitter Cutoff Current
VBE = 200 V; IB = 0
VBE = 6 V; lC = 0
Forward Bias, Second Breakdown
hfe
hFe-1
Collector Current
AC Forward Current Transfer Ratio
DC Current Gain
hFe-2
hFe-3
DC Current Gain
fT
Current-Gain - Bandwidth Product
COB
Output Capacitance
DC Current Gain
Revision Date: 12/5/2012
New Product
lE = 0.02 A; lC = 0
lC = 2 A; 18 = 0.25 A
lC = 4.5 A; IB = 1.125 A
lC = 2 A; VCE = 10 V
VBE = 375 V; VBE = -1.5 V
VBE = 300 V; VBE = -1.5V; TC = 150°C
Mimimum
Typical
300
--
Maximum Units
--
V
350
--
--
V
6
--
--
V
--
--
2.5
V
--
--
5.0
V
--
--
3.0
V
---
---
2
3
mA
--
--
2
mA
--
--
5
mA
tp=1 sec, VCE =100 Vdc
0.8
--
--
A
F = 1 KHz; VCE = 10 Vdc, lC = 0.4 A
lC = 0.4 A; VCE = 10 V
20
--
--
20
--
80
20
--
80
lC = 2 A; VCE = 10 V
lC = 4.5 A; VCE = 10 V
lC = 0.2 A; VCE = 10 V
lE = 0; VCB = 10 V; ftest = 1.0 MHz
5
--
--
2
--
--
MHz
--
--
250
pF
1