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2N297
2N297 Transistors Ge PNP Power BJT Military/High-RelN V(BR)CEO (V)50â V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)95õ I(CBO) Max. (A)3.0m @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)2.0 @I(B) (A) (Test Condition)200m h(FE) Min. Current gain.40 h(FE) Max. Current gain.100 @I(C) (A) (Test Condition)500m @V(CE) (V) (Test Condition)2.0 f(T) Min. (Hz) Transition Freq5.0k @I(C) (A) (Test Condition)500m @V(CE) (V) (Test Condition)14 t(r) Max. (s) Rise time t(f) Max. (s) Fall time. Package StyleTO-3
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