DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2498
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
PACKAGE DIMENSIONS
2SK2498 is N-Channel MOS Field Effect Transistor designed for
(in millimeter)
high current switching applications.
10.0±0.3
FEATURES
• Super Low On-State Resistance
3.2±0.2
4.5±0.2
2.7±0.2
RDS (on)1 ≤ 9 mΩ (VGS = 10 V, ID = 25 A)
Isolate TO-220 Package
4±0.2
Buit-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
60
V
12.0±0.2
High Avalanche Capability Ratings
13.5MIN.
Ciss = 3400 pF TYP.
3±0.1
Low Ciss
15.0±0.3
RDS (on)2 ≤ 14 mΩ (VGS = 4 V, ID = 25 A)
•
•
•
•
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±50
A
Drain Current (pulse)*
ID(pulse)
±200
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
35
W
Total Power Dissipation (TA = 25 ˚C)
PT2
2.0
W
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg
Single Avalanche Current**
IAS
50
A
MP-45F (ISOLATED TO-220)
Single Avalanche Energy**
EAS
250
mJ
Drain
*
–55 to +150 ˚C
1.3±0.2
1.5±0.2
2.54
0.7±0.1
2.54
2.5±0.1
0.65±0.1
1. Gate
2. Drain
3. Source
1 2 3
PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
Body
Diode
Gate
Gate Protection
Diode
Source
Document No. D10044EJ1V0DS00 (1st edition)
Date Published July 1995 P
Printed in Japan
©
1995
