DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2410
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
PACKAGE DIMENSIONS
The 2SK2410 is N-Channel MOS Field Effect Transistor de-
(in millimeters)
signed for high speed switching applications.
4.5 ±0.2
10.0 ±0.3
3.2 ±0.2
FEATURES
2.7 ±0.2
• Low On-Resistance
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended
0.7 ±0.1
13.5 MIN.
4 ±0.2
3 ±0.1
15.0 ±0.3
RDS(on)2 = 60 mΩ MAX. (@ VGS = 4 V, ID = 15 A)
• Low Ciss Ciss = 1500 pF TYP.
• High Avalanche Capability Ratings
• Built-in G-S Gate Protection Diodes
12.0 ±0.2
RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A)
2.5 ±0.1
1.3 ±0.2
1.5 ±0.2
2.54
2.54
0.65 ±0.1
applications.
1. Gate
2. Drain
3. Source
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±30
A
Drain Current (pulse)*
ID(pulse)
±120
1 2 3
A
Total Power Dissipation (Tc = 25 ˚C) PT1
35
W
Total Power Dissipation (TA = 25 ˚C) PT2
2.0
W
150
MP-45F(ISOLATED TO-220)
˚C
Channel Temperature
Tch
Storage Temperature
Tstg
–55 to +150 ˚C
Single Avalanche Current**
IAS
30
EAS
90
mJ
Body
Diode
Gate
A
Single Avalanche Energy**
Drain
*
PW ≤ 10 µs, Duty Cycle ≤ 1 %
Gate Protection
Diode
Source
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
The information in this document is subject to change without notice.
Document No. TC-2497
(O. D. No. TC-8029)
Date Published November 1994 P
Printed in Japan
©
1994
