JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
2SB1375
TO-220
TRANSISTOR (PNP)
1. BASE
FEATURES
High Power Dissipation: PC=25W(TC=25℃)
Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A)
Collector metal(Fin)is Coverd with Mold Regin
Complementary to 2SD2012
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (TA=25℃ unless otherwise noted )
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current -Continuous
-3
A
PC
Collector Dissipation
2
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=-100µA,IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-50mA,IB=0
-60
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100µA,IC=0
-7
V
Collector cut-off current
ICBO
VCB=-60V,IE=0
-10
µA
Emitter cut-off current
IEBO
VEB=-7V,IC=0
-10
µA
hFE(1)
VCE=-5V,IC=-0.5A
100
hFE(2)
VCE=-5V,IC=-2A
15
VCE(sat)
IC=-2A,IB=-0.2A
320
DC current gain
Collector-emitter saturation voltage
-1.5
V
-1
V
Base-emitter voltage
VBE
VCE=-5V,IC=-0.5A
Transition frequency
fT
VCE=-5V,IC=-0.5A
9
MHz
VCB=-10V,IE=0,f=1MHz
50
pF
Collector output capacitance
Cob
A,Mar,2011
