ZTX650
ZTX651
PARAMETER
ZTX650
ZTX651
NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ZTX650
SYMBOL
MIN. TYP.
140
ZTX651
MAX. MIN. TYP.
175
140
UNIT CONDITIONS.
MAX.
175
MHz
Transition
Frequency
fT
Switching Times
ton
45
45
ns
toff
800
800
ns
IC=100mA, VCE=5V
f=100MHz
IC=500mA, VCC=10V
IB1=IB2=50mA
ISSUE 2 JULY 94
FEATURES
* 60 Volt VCEO
* 2 Amp continuous current
* Low saturation voltage
* Ptot=1 Watt
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
VCB=10V f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
SYMBOL
ZTX650
ZTX651
UNIT
VCBO
60
80
V
VCEO
45
VEBO
5
V
Peak Pulse Current
pF
Collector-Base Voltage
Collector-Emitter Voltage
30
PARAMETER
Emitter-Base Voltage
30
Output Capacitance Cobo
ICM
6
A
IC
2
A
1
5.7
W
mW/°C
-55 to +200
°C
Continuous Collector Current
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance:Junction to Ambient1
Junction to Ambient2
Junction to Case
Rth(j-amb)1
Rth(j-amb)2
Rth(j-case)
175
116
70
Power Dissipation
°C/W
°C/W
°C/W
at Tamb=25°C
derate above 25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
60
V
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
PARAMETER
SYMBOL
ZTX650
MIN. TYP.
ZTX651
MAX. MIN. TYP.
MAX.
UNIT CONDITIONS.
Collector-Base
V(BR)CBO
Breakdown Voltage
2.0
C
1.5
Am
1.0
0.5
0
-40 -20
0
20 40
bie
as
e
nt t
te
m
em
pe
ra
per
tu
re
at u
re
t1
D=t1/tP
tP
100
V
IC=100µA
45
60
V
IC=10mA*
Emitter-Base
V(BR)EBO
Breakdown Voltage
D=1 (D.C.)
80
Collector-Emitter
V(BR)CEO
Breakdown Voltage
200
Thermal Resistance (°C/W)
Max Power Dissipation - (Watts)
2.5
60
5
5
V
IE=100µA
10
µA
µA
µA
µA
VCB=45V
VCB=60V
VCB=45V,Tamb=100°C
VCB=60V,Tamb=100°C
0.1
µA
VEB=4V
Collector Cut-Off
Current
D=0.5
0.1
ICBO
0.1
10
D=0.2
Single Pulse
0
0.0001
0.001
0.01
0.1
1
10
100
T -Temperature (°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-220
IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
0.12
0.23
0.3
0.5
0.12
0.23
0.3
0.5
V
V
IC=1A, IB=100mA*
IC=2A, IB=200mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.9
1.25
0.9
1.25
V
IC=1A, IB=100mA*
Base-Emitter
Turn-On Voltage
60 80 100 120 140 160 180 200
Emitter Cut-Off
Current
D=0.1
0.1
VBE(on)
0.8
1
0.8
1
V
IC=1A, VCE=2V*
3-219
