FDP2532 / FDB2532
N-Channel PowerTrench® MOSFET
150 V, 79 A, 16 mΩ
Features
Applications
• RDS(on) = 14 mΩ ( Typ.) @ VGS = 10 V, ID = 33 A
• Consumer Appliances
• QG(tot) = 82 nC ( Typ.) @ VGS = 10 V
• Synchronous Rectification
• Low Miller Charge
• Battery Protection Circuit
• Low Qrr Body Diode
• Motor drives and Uninterruptible Power Supplies
• UIS Capability (Single Pulse and Repetitive Pulse)
• Micro Solar Inverter
Formerly developmental type 82884
D
D
GD
S
G
TO-220
G
D2-PAK
S
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
FDP2532 / FDB2532
Unit
VDSS
Drain to Source Voltage
150
V
VGS
Gate to Source Voltage
±20
V
79
A
Parameter
r
Drain Current
Continuous (TC = 25oC, VGS = 10V)
ID
Continuous (TC = 100oC, VGS = 10V)
56
Pulsed
EAS
PD
TJ, TSTG
A
8
Continuous (Tamb = 25oC, VGS = 10V, R θJA = 43oC/W)
A
Figure 4
A
400
Single Pulse Avalanche Energy (Note 1)
mJ
Power dissipation
310
W
Derate above 25oC
2.07
W/oC
-55 to 175
oC
Operating and Storage Temperature
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case, Max. TO-220, D2-PAK
RθJA
Thermal Resistance Junction to Ambient, Max. TO-220, D2-PAK (Note 2)
RθJA
Thermal Resistance Junction to Ambient
©2002 Fairchild Semiconductor Corporation
FDP2532 / FDB2532 Rev. C2
D2-PAK,
1
Max.
1in2
0.61
copper pad area
oC/W
62
o
C/W
43
o
C/W
www.fairchildsemi.com
FDP2532 / FDB2532 — N-Channel PowerTrench® MOSFET
October 2013
1.2
125
100
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
VGS = 10V
1.0
0.8
0.6
0.4
75
50
25
0.2
0
0
25
50
75
100
150
125
0
175
25
TC , CASE TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
50
75
100
125
TC, CASE TEMPERATURE (oC)
150
175
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2.0
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
ZθJC, NORMALIZED
THERMAL IMPEDANCE
1.0
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x Z θJC x RθJC + TC
SINGLE PULSE
0.01
10 -5
10-4
10 -3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
100
101
Figure 3. Normalized Maximum Transient Thermal Impedance
2000
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
1000
IDM, PEAK CURRENT (A)
TC = 25 oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
175 - TC
150
VGS = 10V
100
50
10-5
10-4
10-3
10-2
t, PULSE WIDTH (s)
10-1
100
101
Figure 4. Peak Current Capability
©2002 Fairchild Semiconductor Corporation
FDP2532 / FDB2532 Rev. C2
3
www.fairchildsemi.com
FDP2532 / FDB2532 — N-Channel PowerTrench® MOSFET
Typical Characteristics TC = 25°C unless otherwise noted
