FDB2552 / FDP2552
N-Channel PowerTrench® MOSFET
150V, 37A, 36mΩ
Features
Applications
• r DS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 16A
• DC/DC Converters and Off-line UPS
• Qg(tot) = 39nC (Typ.), VGS = 10V
• Distributed Power Architectures and VRMs
• Low Miller Charge
• Primary Switch for 24V and 48V Systems
• Low QRR Body Diode
• High Voltage Synchronous Rectifier
• UIS Capability (Single Pulse and Repetitive Pulse)
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems
Formerly developmental type 82869
D
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
G
GATE
SOURCE
TO-220AB
TO-263AB
FDP SERIES
DRAIN
(FLANGE)
S
FDB SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
Parameter
Ratings
150
Units
V
VGS
Gate to Source Voltage
±20
V
Continuous (TC = 25oC, VGS = 10V)
37
A
Continuous (TC = 100oC, VGS = 10V)
26
A
5
A
Drain Current
ID
Continuous (Tamb = 25oC, VGS = 10V) with RθJA = 43oC/W
Pulsed
EAS
PD
TJ, TSTG
Figure 4
A
Single Pulse Avalanche Energy (Note 1)
390
mJ
Power dissipation
150
W
Derate above 25oC
1.0
W/oC
Operating and Storage Temperature
o
-55 to 175
C
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case TO-220, TO-263
1.0
o
C/W
RθJA
Thermal Resistance Junction to Ambient TO-220, TO-263 (Note 2)
62
o
C/W
RθJA
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
43
o
C/W
©2010 Fairchild Semiconductor Corporation
FDB2552 / FDP2552 Rev. B1
FDB2552 / FDP2552
December 2010
FDB2552 / FDP2552
Typical Characteristics TC = 25°C unless otherwise noted
1.2
40
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
30
20
10
0.2
0
0
0
25
50
75
100
150
125
175
25
50
75
TC , CASE TEMPERATURE (oC)
100
125
TC, CASE TEMPERATURE
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
150
175
(oC)
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
ZθJC, NORMALIZED
THERMAL IMPEDANCE
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t , RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
700
IDM, PEAK CURRENT (A)
TC = 25oC
FOR TEMPERATURES
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - TC
I = I25
150
VGS = 10V
100
30
10-5
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
©2010 Fairchild Semiconductor Corporation
FDB2552 / FDP2552 Rev. B1
